首页 > Begell House作者，编辑及审稿者
Daniel Morvan
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France
Articles:
LIBS ANALYSIS OF PHOTOVOLTAIC MATERIAL INCLUDING WAFER AND RAW MATERIAL - Vol. 10 '2006 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
OPTICAL EMISSION SPECTROSCOPY OF A SUPERSONIC LOW-PRESSURE PLASMA REACTOR USED TO SYNTHESIS SOFC CATHODES THIN LAYERS - Vol. 10 '2006 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
RF PLASMA PROCESS FOR HIGH PURITY SILICON - Vol. 10 '2006 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
EFFECTS OF PLASMA PARAMETERS ON PASSIVATION OF POLYCRYSTALLINE SILICON IN INDUCTIVE LOW PRESSURE HYDROGEN PLASMA - Vol. 11 '2007 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
A FLEXIBLE LOW PRESSURE PLASMA PROCESS FOR THE DEPOSITION OF COMPLEX THICK OXIDE COATINGS - Vol. 13 '2009 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
EFFECTS OF THE DC BIAS APPLIED TO A MG MOLTEN SILICON BATH ON ITS PURIFICATION BY RF THERMAL PLASMA - Vol. 13 '2009 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
NON EQUILIBRIUM CALCULATION OF THE INDUCTIVELY COUPLED PLASMA TORCH. EFFECT OF THE AXIAL COLD CHANNEL - Vol. 3 '1999 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
Study of excited atomic states of hydrogen and chemical phenomena on liquid silicon target under a RF inductive thermal plasma torch - Vol. 5 '2001 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
CALCULATION OF SILICON PARTICLES DYNAMICS, HEAT AND MASS TRANSFERS IN THERMAL PLASMAS. EFFECT OF PARTICLES VAPORIZATION - Vol. 7 '2003 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
EFFECTS OF PLASMA PARAMETERS ON THE PROPERTIES OF La1-xSrxMnO3 THIN LAYERS DEPOSITED IN LOW-PRESSURE RF PLASMA WAVE SHOCK REACTOR - Vol. 7 '2003 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
OPTICAL SPECTROSCOPIC DIAGNOSTIC OF AN Ar+H2 RF THERMAL PLASMA USED TO THE SILICON POWDER PURIFICATION. EFFECT OF THE EVAPORATION PHENOMENA - Vol. 7 '2003 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
OPTICAL SPECTROSCOPIC DIAGNOSTIC OF AN ARGON-HYDROGEN RF INDUCTIVE THERMAL PLASMA TORCH - Vol. 7 '2003 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
PURIFICATION AND HYDROGENATION OF METALLURGICAL SILICON POWDER BY RF THERMAL PLASMA. CHARACTERIZATION OF THE DEPOSIT - Vol. 7 '2003 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SILICON MATERIAL THERMAL TREATMENT PROCESS. EVALUATION OF RESIDENCE TIME - Vol. 7 '2003 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
INVESTIGATION ON SUPERSONIC GAS FLOW COUPLED WITH AN INDUCTIVE LOW-PRESSURE PLASMA USED FOR THE SYNTHESIS OF SOFC MATERIAL - Vol. 8 '2004 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
HYDROGENATION AND PURIFICATION OF SILICON BY RF PLASMA - Vol. 9 '2005 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
OPTICAL DIAGNOSTICS TO CONTROL ON LINE MELTING OF SILICON MATERIAL TREATED BY THERMAL PLASMA PROCESS. NEW IMPROVEMENTS FACED WITH SEVERE CONDITIONS. - Vol. 9 '2005 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
PASSIVATION OF POLYCRYSTALLINE SILICON BY HYDROGEN PLASMA : CHARACTERIZATION BY IMPEDANCE SPECTROSCOPY - Vol. 9 '2005 - High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
DIAGNOSTIC OF FLOW FIELDS OF SILICON PARTICLES IN AN RF PLASMA FOR PURIFICATION TREATMENTS - Vol. 1 '1997 - Progress in Plasma Processing of Materials, 1997
EXPERIMENTAL INVESTIGATION OF IMPURITY EVAPORATION FROM POWDERS INJECTED IN AN RF PLASMA TORCH - Vol. 1 '1997 - Progress in Plasma Processing of Materials, 1997
MODELLING OF THE RF MULTIFLUX PLASMATRON - Vol. 1 '1997 - Progress in Plasma Processing of Materials, 1997
OFF-LINE STUDIES OF PLASMA SURFACE INTERACTIONS BETWEEN A RF PLASMA JET AND 3W/0 BORON DOPED GRAPHITE - Vol. 1 '1997 - Progress in Plasma Processing of Materials, 1997
CALCULATION OF TEMPERATURE AND FLOW IN RF PLASMATORCH - INFLUENCE OF COLD CHANNEL PRODUCED BY AXIAL GAS INJECTION - Vol. 1 '1999 - Progress in Plasma Processing of Materials, 1999
IN-FLIGHT MEASUREMENT OF PARTICLE SIZE AND VELOCITY IN A RADIO FREQUENCY PLASMA TORCH - Vol. 1 '1999 - Progress in Plasma Processing of Materials, 1999
PLASMA PROCESS FOR THE VITRIFICATION OF INCINERATION FLYASH - Vol. 1 '1999 - Progress in Plasma Processing of Materials, 1999
PROPERTIES AND CHARACTERISATION OF PHOTOVOLTAIC SILICON LAYERS OBTAINED BY RF THERMAL PLASMA SPRAYING PROCESS - Vol. 1 '1999 - Progress in Plasma Processing of Materials, 1999
INVESTIGATION OF DUSTED JET OF RF PLASMA TORCH - Vol. 0 '2001 - Progress in Plasma Processing of Materials, 2001
PHYSICO-CHEMICAL CONDITIONS STUDY FOR DEPOSITION OF SILICON LAYER ON A SUBSTRATE BY RF PLASMA - Vol. 0 '2001 - Progress in Plasma Processing of Materials, 2001
STUDY OF VARIOUS PARAMETERS INFLUENCING THE TREATMENT OF SILICON PARTICLES IN A R.F. PLASMA FLOW - Vol. 0 '2001 - Progress in Plasma Processing of Materials, 2001
Use of a Plasma Torch as an Ablation Test Mean - Study of the Ablation Behavior of two Graphitic Materials: C + NbC, C + TaC - Vol. 0 '2001 - Progress in Plasma Processing of Materials, 2001
CALCULATION OF SILICON PARTICLES DYNAMICS, HEAT AND MASS TRANSFERS IN THERMAL PLASMAS. EFFECT OF PARTICLES VAPORIZATION - Vol. 0 '2003 - Progress in Plasma Processing of Materials, 2003
EFFECTS OF PLASMA PARAMETERS ON THE PROPERTIES OF La1-xSrxMnO3 THIN LAYERS DEPOSITED IN LOW-PRESSURE RF PLASMA WAVE SHOCK REACTOR - Vol. 0 '2003 - Progress in Plasma Processing of Materials, 2003
OPTICAL SPECTROSCOPIC DIAGNOSTIC OF AN ARGON-HYDROGEN RF INDUCTIVE THERMAL PLASMA TORCH - Vol. 0 '2003 - Progress in Plasma Processing of Materials, 2003
PLASMA REFINING OF METALLURGICAL SILICON: THERMODYNAMIC AND CHEMICAL ASPECTS - Vol. 0 '2003 - Progress in Plasma Processing of Materials, 2003
PURIFICATION AND HYDROGENATION OF METALLURGICAL SILICON POWDER BY RF THERMAL PLASMA. CHARACTERIZATION OF THE DEPOSIT. - Vol. 0 '2003 - Progress in Plasma Processing of Materials, 2003
SILICON MATERIAL THERMAL TREATMENT PROCESS. EVALUATION OF RESIDENCE TIME - Vol. 0 '2003 - Progress in Plasma Processing of Materials, 2003