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电信和无线电工程
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN 打印: 0040-2508
ISSN 在线: 1943-6009

卷:
卷 79, 2020 卷 78, 2019 卷 77, 2018 卷 76, 2017 卷 75, 2016 卷 74, 2015 卷 73, 2014 卷 72, 2013 卷 71, 2012 卷 70, 2011 卷 69, 2010 卷 68, 2009 卷 67, 2008 卷 66, 2007 卷 65, 2006 卷 64, 2005 卷 63, 2005 卷 62, 2004 卷 61, 2004 卷 60, 2003 卷 59, 2003 卷 58, 2002 卷 57, 2002 卷 56, 2001 卷 55, 2001 卷 54, 2000 卷 53, 1999 卷 52, 1998 卷 51, 1997

电信和无线电工程

DOI: 10.1615/TelecomRadEng.v77.i19.50
pages 1729-1733

SURFACE-BARRIER UV DETECTORS BASED ON WIDE BANDGAP SEMICONDUCTORS

Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
V. V. Melnyk
Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, Chernivtsi, 58012, Ukraine
Yu. V. Vorobiev
Centro de Investigaciony de Estudios Avanzados del IPW (CINVESTAN) Queretaro, Ubraimento Norponiente 2000, Fracc. Real de Iuriquilla, 76230 Queretaro, Mexico

ABSTRACT

We report on successful development of surface-barrier diodes based on zinc selenide. The use carrier injection amplification allowed improvement of device sensitivity up to amplification coefficient of 20 A/W at wavelength of 0.25 μm.


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