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电信和无线电工程
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 打印: 0040-2508
ISSN 在线: 1943-6009

卷:
卷 78, 2019 卷 77, 2018 卷 76, 2017 卷 75, 2016 卷 74, 2015 卷 73, 2014 卷 72, 2013 卷 71, 2012 卷 70, 2011 卷 69, 2010 卷 68, 2009 卷 67, 2008 卷 66, 2007 卷 65, 2006 卷 64, 2005 卷 63, 2005 卷 62, 2004 卷 61, 2004 卷 60, 2003 卷 59, 2003 卷 58, 2002 卷 57, 2002 卷 56, 2001 卷 55, 2001 卷 54, 2000 卷 53, 1999 卷 52, 1998 卷 51, 1997

电信和无线电工程

DOI: 10.1615/TelecomRadEng.v55.i8.130
5 pages

On Spectral Modeling of Microwave Devices

A. V. Gritsunov
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkov, 61166, Ukraine

ABSTRACT

A new approach is proposed to numerical investigation of the frequency dependences of physical processes in microwave devices that can be named "spectral approach". After one-frequency and multifrequency models, the approach presents a next stage in the development of modeling. Its essence consists in conversion of input signal from frequency space to time space, subsequent nonstationary modeling of electromagnetic wave passing through a device, and output signal reverse convertion from time to frequency space. Nonstationary models of various levels are considered that can be used in spectral modeling of microwave devices.


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