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电信和无线电工程
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 打印: 0040-2508
ISSN 在线: 1943-6009

卷:
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电信和无线电工程

DOI: 10.1615/TelecomRadEng.v60.i56.170
8 pages

Joint Operation of Two-Level Resonant Tunnelling and Gunn Diodes

O. V. Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61022, Ukraine
E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine

ABSTRACT

The operation of AlAs/GaAs two-level resonant tunneling and GaAs Gunn diodes which are series-connected in a resonance circuit, has been considered. The current-voltage characteristics of this kind of a diode combination have the following particularities: current jumping, regions being inaccessible for measurements in the current-voltage characteristics, shifts of current maxima to the region of larger voltages. On the current-voltage characteristics there are three regions with negative differential conductivity which can be used for generating in the millimeter wave band. The ratios of the parameters of the Gunn and resonant tunneling diodes join-operated, which provide the formation of three generation zones (two zones exist at the expense of resonant tunneling and one of them forms owning to electron intervalley transfer), have been determined. In these areas the generation efficiency has been estimated at the millimeter wave band.


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