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电信和无线电工程
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 打印: 0040-2508
ISSN 在线: 1943-6009

卷:
卷 78, 2019 卷 77, 2018 卷 76, 2017 卷 75, 2016 卷 74, 2015 卷 73, 2014 卷 72, 2013 卷 71, 2012 卷 70, 2011 卷 69, 2010 卷 68, 2009 卷 67, 2008 卷 66, 2007 卷 65, 2006 卷 64, 2005 卷 63, 2005 卷 62, 2004 卷 61, 2004 卷 60, 2003 卷 59, 2003 卷 58, 2002 卷 57, 2002 卷 56, 2001 卷 55, 2001 卷 54, 2000 卷 53, 1999 卷 52, 1998 卷 51, 1997

电信和无线电工程

DOI: 10.1615/TelecomRadEng.v55.i3.120
9 pages

Microwave Reflectivity of HTS Film - Dielectric Substrate Structure at Arbitrary Incidence Angles

Nikolay T. Cherpak
O.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine
Alexey Gubin
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine
A. A. Lavrinovich
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine

ABSTRACT

Microwave reflectivity properties of HTS film - dielectric substrate structure in the framework of «optical» terminology for millimeter waveband have been studied by means of computer modeling. For this purpose the enhanced two-fluid model of HTS microwave properties is applied. Some peculiar features in the reflection coefficient of the p-polarized waves obliquely incident on the sample are observed, and difference between the values of the reflectivity in S- and N-states is calculated. For thin HTS films (thickness < λL) the non-monotonic dependences of the reflectivity versus both temperature and the incidence angle (in N-state) are observed. For thick films (thickness > λL) the difference enhancement factor can be as much as 25 at the incidence angle of 88°. To perform the simulation, the material parameters of YBa2Cu3O7−δ superconductor and LaAlO3 substrate in the frequency range of 40-160 GHz have been used.


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