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电信和无线电工程
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN 打印: 0040-2508
ISSN 在线: 1943-6009

卷:
卷 79, 2020 卷 78, 2019 卷 77, 2018 卷 76, 2017 卷 75, 2016 卷 74, 2015 卷 73, 2014 卷 72, 2013 卷 71, 2012 卷 70, 2011 卷 69, 2010 卷 68, 2009 卷 67, 2008 卷 66, 2007 卷 65, 2006 卷 64, 2005 卷 63, 2005 卷 62, 2004 卷 61, 2004 卷 60, 2003 卷 59, 2003 卷 58, 2002 卷 57, 2002 卷 56, 2001 卷 55, 2001 卷 54, 2000 卷 53, 1999 卷 52, 1998 卷 51, 1997

电信和无线电工程

DOI: 10.1615/TelecomRadEng.v58.i3-4.100
7 pages

Theory of Semi-Conducting Structure Microwave Field Interaction in a Resonant Cavity

L. I. Sviderskaya
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkov, 61166, Ukraine

ABSTRACT

A mathematical model is developed of the impact of inhomogeneously doped semiconductor structures on the electromagnetic field of microwave resonant measuring transducers. The model allows for the effect of losses in the sample on the field perturbation. The algorithms developed after the mathematical model permit studying variations in characteristic parameters of the measuring cavity, practically with any law of admixture distribution over the specimen thickness.


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