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电信和无线电工程
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 打印: 0040-2508
ISSN 在线: 1943-6009

卷:
卷 78, 2019 卷 77, 2018 卷 76, 2017 卷 75, 2016 卷 74, 2015 卷 73, 2014 卷 72, 2013 卷 71, 2012 卷 70, 2011 卷 69, 2010 卷 68, 2009 卷 67, 2008 卷 66, 2007 卷 65, 2006 卷 64, 2005 卷 63, 2005 卷 62, 2004 卷 61, 2004 卷 60, 2003 卷 59, 2003 卷 58, 2002 卷 57, 2002 卷 56, 2001 卷 55, 2001 卷 54, 2000 卷 53, 1999 卷 52, 1998 卷 51, 1997

电信和无线电工程

DOI: 10.1615/TelecomRadEng.v63.i5.60
pages 435-441

M-Band Low-Noise Semiconductor Amplifier

O. I. Bilous
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine
Anatoly Ivanovich Fisun
A.Ya. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine
O. N. Sukhoruchko
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085, Ukraine

ABSTRACT

Problems of decrease of loss in a parametric two-circuit amplifier trough the use of dielectric inserts with the inclined edges as a resonant circuit of no-load frequency are considered in the study. Results of electrodynamic simulation of oscillatory processes in a dielectric insert in a rectangular waveguide are represented. Experimental amplitude and noise characteristics of the breadboard model of the parametric amplifier realized on the basis of the considered filter are given. Within the range of 60 GHz the amplification factor has been obtained no less than 12 dB over a half-power bandwidth of 1.2 GHz with a noise temperature of 550 K.


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