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电信和无线电工程
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 打印: 0040-2508
ISSN 在线: 1943-6009

卷:
卷 78, 2019 卷 77, 2018 卷 76, 2017 卷 75, 2016 卷 74, 2015 卷 73, 2014 卷 72, 2013 卷 71, 2012 卷 70, 2011 卷 69, 2010 卷 68, 2009 卷 67, 2008 卷 66, 2007 卷 65, 2006 卷 64, 2005 卷 63, 2005 卷 62, 2004 卷 61, 2004 卷 60, 2003 卷 59, 2003 卷 58, 2002 卷 57, 2002 卷 56, 2001 卷 55, 2001 卷 54, 2000 卷 53, 1999 卷 52, 1998 卷 51, 1997

电信和无线电工程

DOI: 10.1615/TelecomRadEng.v63.i2.50
pages 151-155

L-Band Low-Noise Amplifier

O. N. Sukhoruchko
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085, Ukraine

ABSTRACT

The paper presents the experimental research results for a low-noise non-cooled parametric amplifier intended for implementation as an input stage of 60 GHz band receivers. The electrodynamical properties of the oscillation system, in which the coaxial waveguide resonator was used as the idler frequency loop, were studied. The experimental research results for the models of amplifiers, which were executed using the Schottky chip diodes are provided. The gain value was 16 dB within the 1 GHz bandwidth and the electric adjustment range was 6 GHz.


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