图书馆订阅: Guest
Begell Digital Portal Begell 数字图书馆 电子图书 期刊 参考文献及会议录 研究收集
电信和无线电工程
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN 打印: 0040-2508
ISSN 在线: 1943-6009

卷:
卷 79, 2020 卷 78, 2019 卷 77, 2018 卷 76, 2017 卷 75, 2016 卷 74, 2015 卷 73, 2014 卷 72, 2013 卷 71, 2012 卷 70, 2011 卷 69, 2010 卷 68, 2009 卷 67, 2008 卷 66, 2007 卷 65, 2006 卷 64, 2005 卷 63, 2005 卷 62, 2004 卷 61, 2004 卷 60, 2003 卷 59, 2003 卷 58, 2002 卷 57, 2002 卷 56, 2001 卷 55, 2001 卷 54, 2000 卷 53, 1999 卷 52, 1998 卷 51, 1997

电信和无线电工程

DOI: 10.1615/TelecomRadEng.v57.i6-7.150
7 pages

In 0.4Ga 0.6As Gunn Diodes with a m-n : InP1-x Asx Cathode

Yu. V. Arkusha
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine
E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine

ABSTRACT

The operation of the In0.4Ga0.6As Gunn-effect diodes with a m-n: InP1-xAsx cathode has been investigated in terms of a two-temperature model at a crystal lattice temperature of 300K and an active region length of 0.5; 0.8; 1.0 μm. The optimal InP1-xAsx composition is determined for each diode length. For the diode having a 10 μm-active region an optimal height of the potential barrier on the metal-semiconductor contact is likewise specified. It is shown that the maximum generation frequency is ~250GHz.


Articles with similar content:

Modelling the Gunn Diodes Based on Variband Semiconductors
Telecommunications and Radio Engineering, Vol.59, 2003, issue 1&2
I. P. Storozhenko
Operation of Gunn Diode Containing Two InP0.7As0.3−In0.4Ga0.6As Active Regions
Telecommunications and Radio Engineering, Vol.59, 2003, issue 1&2
Yu. V. Arkusha, E. D. Prokhorov, I. P. Storozhenko
InP1-x(z)Asx(z) Variband Gunn Diodes with Different Cathode Contacts
Telecommunications and Radio Engineering, Vol.66, 2007, issue 19
I. P. Storozhenko
STATIC DOMAIN IN A TRANSFERRED-ELECTRON DEVICE BASED ON GRADED-GAP AlGaAS
Telecommunications and Radio Engineering, Vol.75, 2016, issue 12
I. P. Storozhenko
Initiation and Drift of the Space-Charge Waves in Devices Based on Variband GaPx(z)As1−x(z) with the Intervalley Electron Transport
Telecommunications and Radio Engineering, Vol.67, 2008, issue 10
I. P. Storozhenko