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电信和无线电工程
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 打印: 0040-2508
ISSN 在线: 1943-6009

卷:
卷 78, 2019 卷 77, 2018 卷 76, 2017 卷 75, 2016 卷 74, 2015 卷 73, 2014 卷 72, 2013 卷 71, 2012 卷 70, 2011 卷 69, 2010 卷 68, 2009 卷 67, 2008 卷 66, 2007 卷 65, 2006 卷 64, 2005 卷 63, 2005 卷 62, 2004 卷 61, 2004 卷 60, 2003 卷 59, 2003 卷 58, 2002 卷 57, 2002 卷 56, 2001 卷 55, 2001 卷 54, 2000 卷 53, 1999 卷 52, 1998 卷 51, 1997

电信和无线电工程

DOI: 10.1615/TelecomRadEng.v71.i11.80
pages 1045-1055

GENERATION AND FREQUENCY MULTIPLICATION BY GaAs-DIODES WITH TUNNEL BOUNDARIES

E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
O. V. Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61022, Ukraine
O. A. Klimenko
V. Karazin National University of Kharkov, 4, Svoboda Square, Kharkov 61077, Ukraine

ABSTRACT

Volt-ampere characteristics and efficiency of tunnel-boundary GaAs diodes with sandwich structures is stidied. The generation efficiency at the fundamental and harmonic frequencies is analyzed in dependence on the resistance between contacts of the diode structure and on the resistance connected in series with the tunnel boundaries. The upper boundary of the operation frequency range of the tunnel-boundary diodes is estimated. It is shown that the tunnel-boundary diodes can be used for harmonic generation and frequency multiplication within the frequency range tens to hundreds of gigahertz.


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