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电信和无线电工程
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 打印: 0040-2508
ISSN 在线: 1943-6009

卷:
卷 78, 2019 卷 77, 2018 卷 76, 2017 卷 75, 2016 卷 74, 2015 卷 73, 2014 卷 72, 2013 卷 71, 2012 卷 70, 2011 卷 69, 2010 卷 68, 2009 卷 67, 2008 卷 66, 2007 卷 65, 2006 卷 64, 2005 卷 63, 2005 卷 62, 2004 卷 61, 2004 卷 60, 2003 卷 59, 2003 卷 58, 2002 卷 57, 2002 卷 56, 2001 卷 55, 2001 卷 54, 2000 卷 53, 1999 卷 52, 1998 卷 51, 1997

电信和无线电工程

DOI: 10.1615/TelecomRadEng.v57.i8-9.120
6 pages

Boundary Estimation of Ballistic Transport in the GaAs Devices with Submicron Dimensions

S. A. Zuev
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
V. V. Starostenko
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
A. A. Shadrin
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine

ABSTRACT

The dominating mechanisms of dissipation in a semiconductor structure based on GaAs have been considered. Time dependences of the free path velocity for the different parameters of the material and the results of estimation of the optimal velocity and the maximal length in which electrons move in the ballistic regime are represented.


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