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电信和无线电工程
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN 打印: 0040-2508
ISSN 在线: 1943-6009

卷:
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电信和无线电工程

DOI: 10.1615/TelecomRadEng.v57.i2-3.210
5 pages

Mechanism of Metal Film Sputtering under Influence of Atomic Hydrogen

G. V. Snezhnoi
Zaporozhye National Technical University, 64, Zhukovskogo St., Zaporozhye, 69063, Ukraine
M. V. Matyushin
Zaporozhye National Technical University, 64, Zhukovskogo St., Zaporozhye, 69063, Ukraine

ABSTRACT

Studies are reported of the processes at the surface and in the gas phase during atomizing of metal films under influence of atomic hydrogen. Specifically, germanium crystals with Cu films (d=m) processed by atomic hydrogen at normal temperatures are considered. The mechanism of film atomizing in the model systems is discussed.


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