图书馆订阅: Guest
Begell Digital Portal Begell 数字图书馆 电子图书 期刊 参考文献及会议录 研究收集
电信和无线电工程
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 打印: 0040-2508
ISSN 在线: 1943-6009

卷:
卷 78, 2019 卷 77, 2018 卷 76, 2017 卷 75, 2016 卷 74, 2015 卷 73, 2014 卷 72, 2013 卷 71, 2012 卷 70, 2011 卷 69, 2010 卷 68, 2009 卷 67, 2008 卷 66, 2007 卷 65, 2006 卷 64, 2005 卷 63, 2005 卷 62, 2004 卷 61, 2004 卷 60, 2003 卷 59, 2003 卷 58, 2002 卷 57, 2002 卷 56, 2001 卷 55, 2001 卷 54, 2000 卷 53, 1999 卷 52, 1998 卷 51, 1997

电信和无线电工程

DOI: 10.1615/TelecomRadEng.v75.i12.60
pages 1101-1111

STATIC DOMAIN IN A TRANSFERRED-ELECTRON DEVICE BASED ON GRADED-GAP AlGaAS

I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine

ABSTRACT

The usage of the varyband semiconductors in uniformly doped devices with intervalley electron transfer effect can result in the formation of a static electric domain. Keen interest in the static domain is due to the possibility of creating local electric field strength sufficient for zone-zone impact ionization. Diodes with avalanche ionization in the static domain can be used as active elements of noise generators. The paper analyzes the process of the static domain formation and avalanche current in it on the basis of a two-temperature model of varyband AlGaAs. It is shown that for a static domain formation at room temperature, two conditions are required. First, the minimum value of the energy gap between the Γ-valley and the closest to it in side valley by energy should be smaller than the thermal energy of the electrons. Secondly, the rate of change of the energy gap with coordinate must be greater than 150 eV·m-1. Accordingly, in the devices based on Al0.36Ga0.64As–GaAs cathode static domain is formed, and in the devices on the basis of GaAs-Al0.36Ga0.64As anode domain is formed. Varyband semiconductor compounds in which the static domain may form has been determined. The usage of graded-gap Al0.36Ga0.64As–GaAs compound with low doping level near the cathode increases the effective and integral current-multiplication factors as compared to GaAs-diode. The findings expand the knowledge of the physical processes of carrier transport in complex semiconductor structures. They can be used for technological development of new high-speed devices, such as transistors, diodes, Gunn diodes with a static domain, avalanche transit-time diodes, frequency multipliers.


Articles with similar content:

AlGaInAs GRADED-GAP GUNN DIODE
Telecommunications and Radio Engineering, Vol.75, 2016, issue 16
I. P. Storozhenko, M. V. Kaydash
PROPERTIES OF AlInN GRADED-GAP GUNN DIODES
Telecommunications and Radio Engineering, Vol.73, 2014, issue 10
M. V. Kaydash
In 0.4Ga 0.6As Gunn Diodes with a m-n : InP1-x Asx Cathode
Telecommunications and Radio Engineering, Vol.57, 2002, issue 6-7
Yu. V. Arkusha, E. D. Prokhorov, I. P. Storozhenko
InBN AND GaBN GRADED-GAP GUNN DIODES
Telecommunications and Radio Engineering, Vol.73, 2014, issue 16
Yu. V. Arkusha, A.N. Yaroshenko, I. P. Storozhenko
IMPACT IONIZATION IN SHORT AlZGa1-ZN-BASED DIODES
Telecommunications and Radio Engineering, Vol.76, 2017, issue 1
V. A. Zozulia, K. H. Pryhodko, O. V. Botsula