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电信和无线电工程
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN 打印: 0040-2508
ISSN 在线: 1943-6009

卷:
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电信和无线电工程

DOI: 10.1615/TelecomRadEng.v74.i8.50
pages 709-723

INVESTIGATION INTO ENERGY CHARACTERISTICS OF SATURATED CLASS-F AMPLIFIER

A.P. Yefimovich
Donetsk National University, 24, Universitetskaya St., Donetsk, 83001, Ukraine
V. G. Kryzhanovskyi
Donetsk National University, 24, Universitetskaya St., Donetsk, 83001, Ukraine

ABSTRACT

A mutual influence of the characteristics such as the input signal level, impedance in the 3-rd harmonic Z(3f0) and the transistor output capacitance, Cout, upon the power drain efficiency 0) and the output power, Pout, of the saturated class-F power amplifier (PA). At different values of Cout being available, we have found the optimal region of the input signal level and the harmonic Z(3 f0), in which (η0) is kept high. An increase in Cout is found to promote the rise in (η0) and Pout. We have shown that the saturated class-F PA offer higher values of (η0) and Pout as compared to the unsaturated class-F PA. It is exactly by experiments that in the saturated class-F PA made with transistor 2N7000L, at an operating frequency 13.56 MHz, we have obtained η0 = 83.21%, Pout = 2.226 Wand the power added efficiency (PAE)=83.14%.


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