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自动化与信息科学期刊
SJR: 0.232 SNIP: 0.464 CiteScore™: 0.27

ISSN 打印: 1064-2315
ISSN 在线: 2163-9337

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自动化与信息科学期刊

DOI: 10.1615/JAutomatInfScien.v33.i1.50
7 pages

Simulation of the Process of Creation of Thin Silicide Films on Silicon under High-temperature Annealing

Ivan S. Levchenko
V.M. Glushkov Institute of Cybernetics of National Academy of Sciences of Ukraine, Kyiv
Anatoliy A. Sukennyk
Institute of Space Research of National Academy of Sciences of Ukraine and National Space Agency of Ukraine, Kyiv, Ukraine
Georgiy A. Chechko
Institute of Space Research of National Academy of Sciences of Ukraine and National Space Agency of Ukraine, Kyiv

ABSTRACT

The diffusion model for the process of creation of thin silicide films on silicon is developed. We obtain the formulas for determining the speed of motion of the interphase boundary of silicide-silicon and time for completion of formation of a silicide layer depending on the width of an evaporated metal film, the temperature of annealing, the diffusion coefficient and the maximum solubility of diffusant in the silicid.