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DIFFUSION OF HYDROGEN IN POROUS SILICON-BASED SENSORS

卷 13, 册 2, 2010, pp. 97-102
DOI: 10.1615/JPorMedia.v13.i2.10
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摘要

Porous silicon (PS) layers of 65% porosity on n-type (111) Si substrates were prepared by anodic etching. Au/PS/Si structures have been fabricated by evaporation of thin Au film onto the PS surface. Current-voltage characteristics and the open-circuit voltage (Voc) generation in Au/PS/Si structures were examined at different ambient humidities (water vapor) in the temperature range 295-365 K. Generation of a voltage from 10 to 400 mV with the increase of the relative humidity from 50% relative humidity (RH) to 95% RH was observed in Au/PS/Si sensors. The response and recovery time of open-circuit voltage generated in Au/PS/Si Schottky-type sensors under humid atmosphere depends on ambient temperature. The effective diffusion coefficient of hydrogen estimated from response (or recovery) Voct curves on placing (or removal) of Au/PS/Si sensors in (or out) of humid ambient (90% RH) in the temperature range 313−363 K increases from 3.1 × 10−8 to 1.7 × 10−7 cm2/s and is described as D = 9.2 × 10−3 exp(−0.34 eV/kT). The possible mechanism of the hydrogen diffusion in porous silicon layers of Au/PS/Si sensors was considered.

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对本文的引用
  1. Kurth S., Wang W., Nickich V., Pennartz F., Haas S., Nuys M., Beyer W., Raman spectroscopic analysis of the effect of annealing on hydrogen concentration and microstructure of thick hot wire grown a-Si:H films aimed as precursor layers for crystallized thin film silicon, Thin Solid Films, 714, 2020. Crossref

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