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强化传热期刊
影响因子: 0.562 5年影响因子: 0.605 SJR: 0.175 SNIP: 0.361 CiteScore™: 0.33

ISSN 打印: 1065-5131
ISSN 在线: 1026-5511

强化传热期刊

DOI: 10.1615/JEnhHeatTransf.2012003327
pages 259-270

HEAT TRANSFER ACROSS SILICON−ALUMINUM−SILICON THIN FILMS DUE TO ULTRA−SHORT LASER PULSE IRRADIATION

S. Bin-Mansoor
ME Department, King Fahd University of Petroleum & Minerals, Saudi Arabia
Bekir S. Yilbas
Mechanical Engineering Department, KFUPM Box 1913, Dhahran 31261, Saudi Arabia

ABSTRACT

Heat transfer across silicon−aluminum−silicon thin films due to ultrashort laser pulse irradiation is examined. Since silicon films are dielectric and do not have electrons in the conduction band, phonon radiative transport, based on the Boltzmann transport equation, is incorporated to predict equivalent equilibrium temperature in the silicon thin films. The modified two-equation model is used to account for the nonequilibrium ultrashort laser pulse heating in the aluminum film. The thermal boundary resistance is introduced at the interface of the films and the volumetric electron−phonon resistance is incorporated at the aluminum interfaces. The reflection, absorption, and transmittance of the incident beam by the thin films are determined using the matrix method. Temporal variation of equivalent equilibrium temperature in the silicon thin film is validated with the data presented in the previous study. It is found that the lattice phonon temperature in the aluminum film decays sharply toward the interface due to phonon transport to silicon film. The temperature jump at the silicon−aluminum first interface attains high values when the lattice phonon temperature at the aluminum interface is high.