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强化传热期刊
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ISSN 打印: 1065-5131
ISSN 在线: 1563-5074

强化传热期刊

DOI: 10.1615/JEnhHeatTransf.v24.i1-6.190
pages 361-372

BOILING HEAT TRANSFER FROM A SILICON CHIP IMMERSED IN DEGASSED AND GAS-DISSOLVED FC-72: EFFECTED BY SIZE AND NUMBER DENSITY OF MICRO-REENTRANT CAVITIES

H. Kubo
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Hiroshi Takamatsu
Department of Mechanical Engineering, Kyushu University, Fukuoka 819-0395, Japan
Hiroshi Honda
Institute of Advanced Material Study, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

ABSTRACT

Boiling heat transfer of FC-72 from newly developed treated surfaces with micro-reentrant cavities was studied experimentally. The surface structure was fabricated on a silicon chip by use of microelectronic fabrication techniques. Four kinds of treated surfaces with the combinations of two cavity mouth diameters (about 1.6 μm and 3.1 μm) and two number densities of the micro-reentrant cavities (81 l/cm2 and 96 × 103 l/cm2) were tested along with a smooth surface. Experiments were conducted at the liquid subcoolings of 3 K and 25 K with degassed and gas-dissolved FC-72. While the wall superheat at boiling incipience was strongly dependent on the dissolved gas content; it was little affected by the cavity mouth diameter and the liquid subcooling. The heat transfer performance of the treated surface was considerably higher than that of the smooth surface. The highest performance was obtained with a treated surface with a larger cavity mouth diameter and a larger cavity number density. The results were compared with those for previously developed treated surfaces.


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