摘要

The paper analyzes modern physical models of the formation of surface states based on the mechanisms inherent in nanosized MOS transistors and identifies the most relevant model. The paper shows that this model, despite its advantages, does not take into account the possible influence of cosmic radiation on the formation of surface states in the MOS transistors. We theoretically substantiate the possibility of the influence of cosmic-ray protons on the formation of surface states in the MOS transistors by mechanisms differing from those suggested by the McLean model. We propose a model of the formation of surface states in the MOS transistors under the influence of cosmic-ray protons.