图书馆订阅: Guest
Begell Digital Portal Begell 数字图书馆 电子图书 期刊 参考文献及会议录 研究收集
高温材料处理:国际期刊
SJR: 0.19 SNIP: 0.341 CiteScore™: 0.43

ISSN 打印: 1093-3611
ISSN 在线: 1940-4360

高温材料处理:国际期刊

DOI: 10.1615/HighTempMatProc.v4.i3.50
14 pages

HEAT TRANSFER FROM OXYGEN ATOMS RECOMBINATION ON SILICON CARBIDE: CHEMICAL EVOLUTION OF THE MATERIAL SURFASE

P. Cauquot
Laboratoire de Genie des Procedes Plasmas et Traitement de Surface - ENSCP -11, rue Pierre et Marie Curie - 75231 Paris Cedex 05
S. Cavadias
Laboratoire Genie Precedes Plasmas - ENSCP 11, rue Pierre et Marie Curie - 75005 Paris- France
Jacques Amouroux
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France

ABSTRACT

In order to quantify the energy transfer from the reactive flow to a surface, determination of recombination and accommodation coefficients (respectively γ and β coefficients) is required. The following work concerns atomic oxygen flow recombining on silicon carbide. The γ coefficient is measured in a pulsed oxygen plasma reactor in non equilibrium conditions, using an actinometiic method, whereas the β coefficient is determined in a micro-wave plasma reactor, using a calorimetric method. The βγ coefficient gives also the energetic transfer to the surface during the recombination reaction. The experimental study is undertaken on silicon carbide which presents interesting properties as refractory material. The measurements are performed on a large temperature range (300 - 1123 K) in order to point out a change in the recombination mechanism when the surface temperature rises. At the same time, the chemical structure of the material is followed by different analysis techniques (ESCA, SIMS and SEM) and shows a modification of the chemical composition of silicon carbide resulting from oxidation, ablation of the surface and diffusion of oxygen into the bulk material.


Articles with similar content:

LIBS ANALYSIS OF PHOTOVOLTAIC MATERIAL INCLUDING WAFER AND RAW MATERIAL
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.10, 2006, issue 4
Jacques Amouroux, A. Soric, N. Leone, P. Adam, Daniel Morvan
PASSIVATION OF POLYCRYSTALLINE SILICON BY HYDROGEN PLASMA : CHARACTERIZATION BY IMPEDANCE SPECTROSCOPY
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.9, 2005, issue 2
D. Ballutaud, M. Nikravech, Jacques Amouroux, S. Darwiche, Daniel Morvan
ANALYSIS OF DEVIATION FROM THERMAL AND IONIZATION EQUILIBRIUM IN AN ARGON PLASMA FLOW
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.1, 1997, issue 3
Jacques Amouroux, Sergey V. Dresvin, Nguen Quoc Shi
Non Contact Temperature Field Measurement on Non-Uniform Dynamical Scenes : Contribution of Thermoreflectometry
International Heat Transfer Conference 15, Vol.28, 2014, issue
Gilblas Remi, Yannick Le Maoult, Daniel Hernandez, Thierry Sentenac
CATALYCITY AND AGEING STUDY OF SPACE SHUTTLE MATERIAL: REGENERATION OF THEIR ORIGINAL CATALYTIC PROPERTIES
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.13, 2009, issue 3-4
Jacques Amouroux, V. Micheli, S. Cavadias, G. Da Rold, N. Laidani, C. Guyon