每年出版 4 期
ISSN 打印: 1093-3611
ISSN 在线: 1940-4360
Indexed in
Study of excited atomic states of hydrogen and chemical phenomena on liquid silicon target under a RF inductive thermal plasma torch
摘要
The photovoltaic properties of silicon material are improved after a thermal and chemical treatment by inductive plasma Ar-H2. The diffusion length of minority carriers (LD) increases up to 200 mm despite a high dislocations concentration 106 cm-2 generated during the recrystallization of liquid silicon. The characterisation of different chemical phenomena responsible for such properties are determined by exodiffusion of hydrogen from solid silicon at high temperature and by analysis of the plasma excited species by emission spectroscopy. This study shows that the different states of atomic hydrogen produced in the electromagnetic field of the coil are responsible of the chemical properties of the plasma reacting with liquid silicon. The highly excited states of atomic hydrogen n=3 to n=8 of the Balmer series for hydrogen are identified by optical emission spectroscopy. The silicon dangling bonds react on dislocation with the hydrogen and are stable up to 1000 K.