每年出版 4 期
ISSN 打印: 1093-3611
ISSN 在线: 1940-4360
Indexed in
HIGH-TEMPERATURE COMBUSTION SYNTHESIS OF TANTALUM BORIDE/NITRIDE COMPOSITES
摘要
Tantalum boride/nitride (TaB-TaN) composites were prepared from Ta-B and Ta-BN (boron nitride) powder compacts through self-propagating high-temperature synthesis (SHS) under 0.45−3.20 MPa nitrogen. Starting stoichiometries of the samples include Ta:B (or BN) = 2:1 and 4:1. The increase of nitrogen pressure enhanced the nitridation of tantalum, leading to an increase in combustion temperature and reaction front velocity. Combustion temperature was also increased by increasing Ta in the reactant compact for a higher TaN content formed in the composite. For the sample of Ta:BN = 4:1, BN not only provides boron for the formation of TaB, but acts as a solid source of nitrogen to facilitate the nitridation of Ta. As a result, the intermediate nitride phase Ta2N present in the TaB-TaN composite was substantially reduced by using BN as the precursor, when compared to the product synthesized from the sample adopting elemental boron at Ta:B = 4:1. Due to the low combustion temperature, however, the reaction between Ta and BN was incomplete for the sample of Ta:BN = 2:1, resulting in a deficiency of boron and a large amount of Ta2N. Instead, when a composite with equivalent amounts of TaB and TaN was intended, better formation of TaB and TaN was achieved by the boron-containing sample of Ta:B = 2:1 under nitrogen.
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