图书馆订阅: Guest
Begell Digital Portal Begell 数字图书馆 电子图书 期刊 参考文献及会议录 研究收集
高温材料处理:国际期刊
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN 打印: 1093-3611
ISSN 在线: 1940-4360

高温材料处理:国际期刊

DOI: 10.1615/HighTempMatProc.v7.i2.130
10 pages

MICROWAVE PECVD SYSTEM FOR SiNx:H ANTIREFLECTION COATINGS AND HYDROGEN PASSIVATION ON MULTICRYSTALLINE SILICON

E. Fourmond
Laboratoire de Physique de la Matiere, UMR 5511, 7 av. J. Capelle, INSA, 69621 Villeurbanne cedex, France
M. Lemiti
Laboratoire de Physique de la Matiere, UMR 5511, 7 av. J. Capelle, INSA, 69621 Villeurbanne cedex, France
C. Trassy
UPR 9033 CNRS - EPM, ENSHMG BP 95 - 38402 Saint-Martin-d'Heres - France
A. Laugier
Laboratoire de Physique de la Matiere, UMR 5511, 7 av. J. Capelle, INSA, 69621 Villeurbanne cedex, France

ABSTRACT

Silicon nitride layers (SiNx:H) are widely used in the photovoltaics field as antireflection coating and to passivate multicrystalline silicon solar cells. With this aim, we have developed a plasma-assisted chemical vapour deposition reactor using microwave remote plasma (2.45 GHz). Effect of gas flow rate, microwave power and substrate temperature on the layers is presented. Refractive index varies between 1.7 to 3 in the sample as grown, with a deposition rate up to 40 nm/min. The temperature was observe to have no influence on the deposition rate, and the optical properties of the layers are very stable towards rapid thermal annealing at high temperature (850°C). This is attributed to the low hydrogen content of the layers, as revealed by FTIR analysis.


Articles with similar content:

MICROWAVE PECVD SYSTEM FOR SiNx:H ANTIREFLECTION COATINGS AND HYDROGEN PASSIVATION ON MULTICRYSTALLINE SILICON
Progress in Plasma Processing of Materials, 2003, Vol.0, 2003, issue
C. Trassy, E. Fourmond, M. Lemiti, A. Laugier
Effect of Plasma Damage by PECVD Silicon Nitride Deposition on the Performance of Silicon Inversion Layer Solar Cells
Progress in Plasma Processing of Materials, 1999, Vol.1, 1999, issue
M. Rammensee, R. Hezel, R. Auer
DIFFERENCES BETWEEN AMORPHOUS AND NANOSTRUCTURED SILICON FILMS AND THEIR APPLICATION IN SOLAR CELL
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.11, 2007, issue 4
I. Ferreira, R. Martins, E. Fortunato, L. Raniero
Influence of I.R. radiation on target pyrometric measurement under plasma spraying conditions
Progress in Plasma Processing of Materials, 2001, Vol.0, 2001, issue
Michel Vardelle, Thierry Renault, Pierre Fauchais, Cedric Bossoutrot
RESIDUAL STRESS IN PVD COATINGS - RELATIONSHIP BETWEEN STRESS AND TEXTURE
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.2, 1998, issue 3
J. Machet , O. Piot, C. Gautier