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高温材料处理:国际期刊

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ISSN 打印: 1093-3611

ISSN 在线: 1940-4360

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SPATIAL DISTRIBUTION OF OPTICAL EMISSION IN SiH4/H2 RF DISCHARGES

卷 3, 册 2-3, 1999, pp. 255-261
DOI: 10.1615/HighTempMatProc.v3.i2-3.100
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摘要

Spatially resolved optical emission spectroscopy is used to study the variation of atomic hydrogen emission (Hβ) and SiH* (A2Δ) in the interelectrode space of a parallel plate configuration, usually employed for the deposition of amorphous or microcrystalline silicon. Space integrated emission measurements are presented as a function of power consumed in the process, for pure silane discharges and for hydrogen diluted silane discharges. Atomic hydrogen intensity profiles are also compared with the respective profiles recorded in pure hydrogen plasmas. The origin of atomic hydrogen emission and the effect of silane related gas phase chemistry on the discharge characteristics is discussed

对本文的引用
  1. Amanatides E., Mataras D., Frequency variation under constant power conditions in hydrogen radio frequency discharges, Journal of Applied Physics, 89, 3, 2001. Crossref

  2. Amanatides E., Mataras D., Rapakoulias D. E., Effect of frequency in the deposition of microcrystalline silicon from silane discharges, Journal of Applied Physics, 90, 11, 2001. Crossref

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