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国际多尺度计算工程期刊
影响因子: 1.016 5年影响因子: 1.194 SJR: 0.452 SNIP: 0.68 CiteScore™: 1.18

ISSN 打印: 1543-1649
ISSN 在线: 1940-4352

国际多尺度计算工程期刊

DOI: 10.1615/IntJMultCompEng.2014010761
pages 351-360

THREE-DIMENSIONAL TOPOGRAPHY EVOLUTION ALGORITHM FOR ION BEAM ETCHING PROCESS

Kun-Dar Li
Department of Materials Science, National University of Tainan, Tainan, Taiwan 700 ROC

ABSTRACT

Ion etching is one of the most common and essential processes in modern semiconductor industry. In order to get a better understanding of etching mechanism and provide optimization guidance for the manufacturing process, a three-dimensional topography evolution model based on the phase field method is presented to investigate the effects on surface profile formation during ion beam etching process. Integrating with the Monte Carlo transport of ions in matter (TRIM) calculations for different conditions of ion irradiation, the influences of sputtering, redeposition, etching rate, and diffusion processes are all taken into consideration to compose a kinetic model for ion etching process. Various surface morphologies with ripple-like, pillar-like, and pit-like profiles are formed under different numerical parameters, which are corresponded to various processing conditions. While the sputtering effect plays a dominant factor in the formation mechanism, a roughening topography would be developed, such as the conditions of high ion flux or high ion energy. By decreasing ion flux or increasing temperature, the diffusion process becomes a controlling factor, and it causes a smoothening surface profile. Quantitative analyses of surface roughness for numerical calculations are also examined for the comparison with the experimental observations in the literatures. This theoretical model provides a simple and efficient numerical approach to comprehend the mechanism of topography evolution during ion etching.


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