%0 Journal Article %A Yefimov, V. P. %A Strelnitski, V. Ye. %A Yefimov, S. V. %D 2001 %I Begell House %N 4 %P 10 %R 10.1615/TelecomRadEng.v55.i4.100 %T Interface Structures, Diamond Coatings and Their Application %U https://www.dl.begellhouse.com/journals/0632a9d54950b268,78639f582313fadc,00853ca13c643423.html %V 55 %X Method are considered of the a-Si/c-Si amorphous-crystal transformations and formation of heterophase cluster structures by means of radiation-induced disordering of lattice atoms in the silicon matrix space. Frontal large-gap interface-structure is formed owing to diamond coating of the poly-DC/c-Si. Such a heterosystem, together with diamond-coating protective properties, permits to control affectively charge-carrier streams and to ensure long-term serviceability of the solar cells under Earth and outer space extremal conditions. %8 2001-04-01