RT Journal Article
ID 27a20d535f6de84d
A1 Maksymov, P. P.
T1 A SOLUTION ALGORITHM FOR THE DRIFT-DIFFUSION MODEL EQUATIONS OF SEMICONDUCTING STRUCTURES WITH AVALANCHE *p - n* JUNCTIONS
JF Telecommunications and Radio Engineering
JO TRE
YR 2010
FD 2010-10-06
VO 69
IS 11
SP 1019
OP 1030
K1 semiconductor
K1 algorithm
K1 reverse-based pn-i-pn structure
K1 avalanche-cascade amplification
K1 impact ionization
K1 difference method
K1 microwave radiation
AB An algorithm has been developed for solving the equations of the drift-diffusion model of reverse-based *pn - i - pn* structures with abrupt *p - n* junctions. The algorithm is based on the finite-difference equations of the modified counter-sweep method, combined with a technique for calculating semiconducting *pn - i - pn* structures with abrupt *p - n* junctions and methods for analyzing abrupt *p - n* junctions in the self-oscillation regime. The computation error is estimated for the electric field in Ge-, Si- and GaAs-based *pn - i - pn* structures with a feedback. The relative error of computation has been shown to decrease as the number of modes of the finite difference scheme is increased being limited by the error at approximating to differential operators by the finite-difference ones. The electric field self-oscillations and current densities in such structures are analyzed along with their spectra. The limiting case of low avalanche currents has been investigated.
PB Begell House
LK http://dl.begellhouse.com/journals/0632a9d54950b268,5266678806436799,27a20d535f6de84d.html