%0 Journal Article %A Maksymov, P. P. %A Lukin, K. A. %D 2010 %I Begell House %K semiconductor, self‐oscillation diffusive‐drifting model, reverse-biased p‐n junction, impact ionization %N 11 %P 1005-1017 %R 10.1615/TelecomRadEng.v69.i11.70 %T SELF-EXCITED OSCILLATIONS IN ABRUPT p - n JUNCTIONS WITH A FIXED REVERSE BIAS %U https://www.dl.begellhouse.com/journals/0632a9d54950b268,5266678806436799,46b3517d1d076042.html %V 69 %X Numerical methods are used to solve the drift-diffusion model equations for reverse-based p - n junctions. A regime of self-excited oscillations is analyzed for an abrupt junction with a fixed reverse bias. As has been shown, the equations of the drift-diffusion model of the p - n junctions under analysis in fact make up a mathematical model of a self-oscillating system. The generation mechanism of self-excited excitations has been investigated. The factors influencing the oscillation frequency, amplitude and spectrum have been established and frequency ranges determined for reverse-biased p - n junctions made of various materials. %8 2010-10-06