%0 Journal Article
%A Maksymov, P. P.
%A Lukin, K. A.
%D 2010
%I Begell House
%K semiconductor, self‐oscillation diffusive‐drifting model, reverse-biased p‐n junction, impact ionization
%N 11
%P 1005-1017
%R 10.1615/TelecomRadEng.v69.i11.70
%T SELF-EXCITED OSCILLATIONS IN ABRUPT p - n JUNCTIONS WITH A FIXED REVERSE BIAS
%U https://www.dl.begellhouse.com/journals/0632a9d54950b268,5266678806436799,46b3517d1d076042.html
%V 69
%X Numerical methods are used to solve the drift-diffusion model equations for reverse-based p - n junctions. A regime of self-excited oscillations is analyzed for an abrupt junction with a fixed reverse bias. As has been shown, the equations of the drift-diffusion model of the p - n junctions under analysis in fact make up a mathematical model of a self-oscillating system. The generation mechanism of self-excited excitations has been
investigated. The factors influencing the oscillation frequency, amplitude and spectrum have been established and frequency ranges determined for reverse-biased p - n junctions made of various materials.
%8 2010-10-06