图书馆订阅: Guest
Proceedings of CHT-15. 6th International Symposium on ADVANCES IN COMPUTATIONAL HEAT TRANSFER
May, 25-29, 2015, Rutgers University, New Brunswick, NJ, USA

DOI: 10.1615/ICHMT.2015.IntSympAdvComputHeatTransf


ISBN Print: 978-1-56700-429-8

ISSN: 2578-5486

EXPLORING CONTROLLABILITY OF THERMAL CONDUCTIVITY FOR HIGH PERFORMANCE BULK SILICON THERMOELECTRIC

page 1808
DOI: 10.1615/ICHMT.2015.IntSympAdvComputHeatTransf.1900
Get accessGet access

摘要

Responding to the need for thermoelectric materials with high efficiency in both conversion and cost, we have been developing a nanostructured bulk silicon thermoelectric materials. The challenge here is to reduce the high thermal conductivity of silicon and to realize high and homogeneous carrier concentration for high power factor. The thermal conductivity is reduced by forming nanocrystalline structures by sintering silicon crystal nanoparticles. Prior to developing the actual material, we investigated the potential controllability of thermal conductivity by directly measuring the interfacial thermal conductance at sintered interfaces in a 2D-model experiment, and relating it to thermal conductivity of nanocrystalline structures using the multiscale phonon-transport calculations. In addition, high and homogeneous carrier concentration is realized by using doped nanoparticles of several nanometers in diameters synthesized by plasma-enhanced chemical vapor deposition. The obtained bulk silicon thermoelectric material exhibits very low thermal conductivity and promising figure of merit.

Begell Digital Portal Begell 数字图书馆 电子图书 期刊 参考文献及会议录 研究收集 订购及政策 Begell House 联系我们 Language English 中文 Русский Português German French Spain