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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Druckformat: 0040-2508
ISSN Online: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v63.i10.40
pages 883-889

On the Influence of Ions on the Static Potential Distribution in O-Type Devices with the Long-Time Interaction

G. A. Alexeev
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine


The influence of ions of residual gas on the static potential distribution in the transverse section of the plane-parallel channel with a strip electron beam has been studied. Peculiarities of formation of the natural ion trap have been investigated depending on the parameter of the electronic charge compensation, the temperature of ionic gas, the coefficient of the channel filling by an electron beam, and the asymmetry coefficient of its arrangement. The results can be used at the design of O-type devices with the long-time interaction.

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