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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Druckformat: 0040-2508
ISSN Online: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v65.i17.80
pages 1629-1641

Width of Current-Voltage Characteristics of InxGA1-xN Gunn Diodes

D. V. Pavlenko
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine

ABSTRAKT

The impact ionization in GaN, InN an their compounds is studied. The width of voltage-current characteristics (CVC) and voltages enough to develop the impact ionization in Gunn diodes made from GaN, InN and their compounds are defined.


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