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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Druckformat: 0040-2508
ISSN Online: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v59.i12.80
10 pages

Microwave Amplification Based on the Smith-Purcell Effect in a Distributed Semiconductor Structure

E. M. Khutoryan
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine
Aleksei Ivanovich Tsvyk
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura Str., Kharkiv 61085, Ukraine

ABSTRAKT

In terms of the small signal theory, we study the microwave amplification based on the Smith-Purcell effect in a distributed semiconductor structure. The plasma in the semiconductor is considered in the quasi-hydrodynamic approximation. A characteristic equation is derived and solved numerically.


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