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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Druckformat: 0040-2508
ISSN Online: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v73.i16.60
pages 1461-1470

InBN AND GaBN GRADED-GAP GUNN DIODES

I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine
A.N. Yaroshenko
V.N. Karazin Kharkiv National University, 4, Svobody Sq., Kharkiv, 61022, Ukraine
Yu. V. Arkusha
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

ABSTRAKT

Graded-gap semiconductors can increase the efficiency and output power of the Gunn generators. In the InBN and GaBN compounds, unlike other ternary semiconductor nitrides, the energy gap between the valleys can be reduced to zero, which gives an opportunity to find the optimal distribution of the BN component in graded-gap compounds for the Gunn diodes. The paper describes the results of numerical experiments on the oscillation generation in the range of 0.03...0.7 THz using the n+−n−n+ Gunn diodes based on InBN and GaBN graded-gap semiconductor compounds at different BN distribution. It is shown that the maximum efficiency and output power of generation occur at the maximal BN content near the cathode contact and a length of graded-gap layer of 0.6...0.8 \im. With optimal BN distribution, the graded-gap InBN- and GaBN-Gunn diodes outperform GaN-, InN-diodes for efficiency and output power in 1.07÷3.44 times and AlGaN- and AllnN-diodes in 0.93÷1.69 times. Power consumption of graded-gap InBN- and GaBN-diodes is 11−19 % less than that of InN-, GaN-and AlInN-diodes. These findings provide more understanding of physical processes of carrier transfer in complex semiconductor structures and are applicable for technological development of new high-speed devices based on semiconductor nitrides.


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