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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Druckformat: 0040-2508
ISSN Online: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v75.i12.40
pages 1073-1086

VOLT-AMPERE CHARACTERISTIC AND EXTERNAL INDUCED CURRENT IN AVALANCHE-GENERATOR DIODES WITH REVERSE-BIASED ABRUPT JUNCTIONS

K. A. Lukin
A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine
P. P. Maksymov
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine

ABSTRAKT

Creation of modern solid-state microwave power sources is based on the application of enhanced active elements. The reverse-biased abrupt p–n-junctions are active elements of diode oscillators. Avalanche-generator diodes (AGD) based on the reverse-biased p–n-junctions with DC voltage are the promising for creating such generators. Using diffusion-drift theory we investigated the static current-voltage characteristics of AGD. We also studied the induced current in the AGD external circuit. It was found that the induced current spectrum is defined by the spectrum of AGD self-oscillations. The results of the research are the theoretical basis for creating microwave diode generators with required energy and spectral characteristics.


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