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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.19 SNIP: 0.341 CiteScore™: 0.43

ISSN Druckformat: 1093-3611
ISSN Online: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v6.i1.40
19 pages

STRUCTURAL STUDIES ON SEMICONDUCTING HYDROGENATED AMORPHOUS SILICON OXIDE FILMS

S. M. Iftiquar
Energy Research Unit; Indian Association for the Cultivation of Science; Jadavpur; Calcutta-700 032; India

ABSTRAKT

In hydrogenated amorphous silicon oxide ( a-SiO:H ) films, incorporation of oxygen enhances optical gap due to a large number of St-O-Si bond formation, which lies deep into valence band states. An induction effect of this Si-O on other bonds within the network also takes place. At higher oxygen content micro-void forms and bonded hydrogen accumulates in di and/or polyhydride form. At this stage a phase separation of Si-rich and O-rich region taking place. A peak shift of absorption spectra within 1850 - 2250 cm-1 , towards higher wave number is continuous. A gradual increase and broadening of 850 cm-1 absorption band on both sides of peak position indicate higher structural disorder in network formation. It may be considered that the stretching vibration of-OH bonded to Si gives rise to 780 cm-1 absorption band. This Si-OH formation is beneficial which prevents deterioration in photosensitivity due to reduction in bonded hydrogen content. Hydrogen content is found reducing as oxygen content increases from zero to ~15 at.%. A systematic study is carried out to correlate the optoelectronic property with local atomic arrangement.


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