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International Journal for Multiscale Computational Engineering
Impact-faktor: 1.016 5-jähriger Impact-Faktor: 1.194 SJR: 0.452 SNIP: 0.68 CiteScore™: 1.18

ISSN Druckformat: 1543-1649
ISSN Online: 1940-4352

International Journal for Multiscale Computational Engineering

DOI: 10.1615/IntJMultCompEng.v7.i1.30
pages 9-16

Multiscale Simulation Models for Transient Radiation Effects with 3D Ionizing Tracks in Semiconductor Nanodevices

Alexander I. Fedoseyev
CFD Research Corporation, USA
Marek Turowski
CFD Research Corporation, 215 Wynn Drive, Huntsville, AL 35805, USA
Ashok Raman
CFD Research Corporation, 215 Wynn Drive, Huntsville, AL 35805, USA
Michael L. Alles
Vanderbilt University, Nashville, TN 37237, USA
Robert A. Weller
Vanderbilt University, Nashville, TN 37237, USA

ABSTRAKT

Multiscale simulation models are presented to allow for accurate simulation of transient radiation effects with 3D ionizing tracks in semiconductor nanodevices. These models are implemented in the new CFDRC mixed-mode simulator, which combines multiscale 3D Technology Computer-Aided Design (TCAD) device models (drift-diffusion-based carrier transport and nuclear ion track impact) and advanced compact transistor models. Three-dimensional adaptive mesh generation has been developed and used for simulations of single-event radiation effects with nuclear reactions and secondary particles computed by Vanderbilt’s MRED tools with the use of the Geant4 library.

REFERENZEN

  1. Weller, R. A., Sternberg, A. L., Massengill, L.W., Schrimpf, R. D., and Fleetwood, D. M., Evaluating average and atypical response in radiation effects simulations. DOI: 10.1109/TNS.2003.821576

  2. Kobayashi, A. S., Sternberg, A. L., Massengill, L. W., Schrimpf, R. D., and Weller, R. A., Spatial and temporal characteristics of energy deposition by protons and alpha particles in silicon. DOI: 10.1109/TNS.2004.839176

  3. Turowski, M., Raman, A., and Schrimpf, R., Non-uniform total-dose-induced charge distribution in shallow-trench isolation oxides. DOI: 10.1109/TNS.2004.839201

  4. CFD Research Corporation, <a href="http://www.cfdrc.com/bizareas /microelec/micro nano/">NanoTCAD Web site</a>.

  5. Fedoseyev, A. I., Turowski, M., and Wartak, M. S., Kinetic and quantum models for nanoelectronic and optoelectronic device simulation. DOI: 10.1166/jno.2007.303

  6. Fedoseyev, A. I. and Bessonov, O. A., Iterative solution for large linear systems for unstructured meshes with preconditioning by high order incomplete decomposition.

  7. Kershaw, D. S., The incomplete Choleskyconjugate gradient method for the iterative solution of systems of linear equations. DOI: 10.1016/0021-9991(78)90098-0

  8. Popinet, S., Numerical modelling of fluid flow.

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