RT Journal Article
ID 22f8b57241a974ce
A1 Makhniy, Victor P.
A1 Berezovskiy, M. M.
A1 Kinzerska, O. V.
T1 DEFECT FORMATION MECHANISMS OF ZINC SELENIDE LAYERS DOPED BY ISOVALENT IMPURITIES OF THE II GROUP
JF Telecommunications and Radio Engineering
JO TRE
YR 2019
FD 2019-05-16
VO 78
IS 8
SP 715
OP 723
K1 defect formation mechanisms
K1 zinc selenide
K1 isovalent impurity
K1 intrinsic point defects
K1 quasichemical reaction method
K1 electronegativity
AB The paper discusses the mechanisms of defect formation in melt zinc selenide crystals doped with isovalent impurities of the second group of the Periodic Table. An analytical calculation of the concentrations of equilibrium point defects was carried out by the method of quasichemical reactions using the concepts of electronegativity and effective charge. It has been established that the dominant defects in the doped material are singly charged vacancies of zinc V'Zn and selenium V·Se, as well as singly charged interstitial selenium Se'i. It is shown that the increase in doping temperature Ta from 373 to 1237 K causes se increase of acceptor centers number (V'Zn and Se'i) and decrease of concentration of donor ounces V·Se however, the conductivity of doped substrates at 300 K remains a hole in the whole range of change Ta. At Ta = 373 K the estimated concentration of free holes is ~1019 cm-3 and satisfactorily consistent with the value p determined from the temperature dependence of the layer resistance ZnSe:Ca.
PB Begell House
LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,159aceaf62ec361b,22f8b57241a974ce.html