%0 Journal Article %A Astashynski, Valiantsin M. %A Ananin, Siarhei I. %A Kostyukevich, Evgenij A. %A Fedzechkina, T. T. %A Zhvavy, S. P. %A Garkusha, I. E. %A Solyakov, D. G. %D 2013 %I Begell House %K compression plasma flow, silicon, melt lifetime %N 2-3 %P 137-144 %R 10.1615/HighTempMatProc.2015013737 %T DYNAMICS OF A MOLTEN LAYER ON THE SURFACE OF SILICON WAFER EXPOSED TO A COMPRESSION PLASMA FLOW %U https://www.dl.begellhouse.com/journals/57d172397126f956,7e8735f8127053c6,28b469e323b12753.html %V 17 %X The lifetime of a molten layer at the surface of a silicon target exposed to a compression plasma flow was evaluated by using an optical method. The method is based on a temperature dependence of a shift in the Si fundamental absorption edge. A mathematical model describing the processes of plasma/solid interaction on the single-crystal semiconductor surface exposed to a compression plasma flow was proposed. The results of the experimental estimation of the molten layer lifetime agree satisfactorily with the data of numerical modeling. %8 2015-07-02