RT Journal Article ID 28b469e323b12753 A1 Astashynski, Valiantsin M. A1 Ananin, Siarhei I. A1 Kostyukevich, Evgenij A. A1 Fedzechkina, T. T. A1 Zhvavy, S. P. A1 Garkusha, I. E. A1 Solyakov, D. G. T1 DYNAMICS OF A MOLTEN LAYER ON THE SURFACE OF SILICON WAFER EXPOSED TO A COMPRESSION PLASMA FLOW JF High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes JO HTM YR 2013 FD 2015-07-02 VO 17 IS 2-3 SP 137 OP 144 K1 compression plasma flow K1 silicon K1 melt lifetime AB The lifetime of a molten layer at the surface of a silicon target exposed to a compression plasma flow was evaluated by using an optical method. The method is based on a temperature dependence of a shift in the Si fundamental absorption edge. A mathematical model describing the processes of plasma/solid interaction on the single-crystal semiconductor surface exposed to a compression plasma flow was proposed. The results of the experimental estimation of the molten layer lifetime agree satisfactorily with the data of numerical modeling. PB Begell House LK https://www.dl.begellhouse.com/journals/57d172397126f956,7e8735f8127053c6,28b469e323b12753.html