RT Journal Article
ID 48af5880204a0245
A1 Iftiquar, S. M.
T1 STRUCTURAL STUDIES ON SEMICONDUCTING HYDROGENATED AMORPHOUS SILICON OXIDE FILMS
JF High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
JO HTM
YR 2002
FD 2002-03-01
VO 6
IS 1
OP 19
AB In hydrogenated amorphous silicon oxide ( a-SiO:H ) films, incorporation of oxygen enhances optical gap due to a large number of St-O-Si bond formation, which lies deep into valence band states. An induction effect of this Si-O on other bonds within the network also takes place. At higher oxygen content micro-void forms and bonded hydrogen accumulates in di and/or polyhydride form. At this stage a phase separation of Si-rich and O-rich region taking place. A peak shift of absorption spectra within 1850 - 2250 cm<sup>-1</sup> , towards higher wave number is continuous. A gradual increase and broadening of 850 cm<sup>-1</sup> absorption band on both sides of peak position indicate higher structural disorder in network formation. It may be considered that the stretching vibration of-OH bonded to Si gives rise to 780 cm<sup>-1</sup> absorption band. This Si-OH formation is beneficial which prevents deterioration in photosensitivity due to reduction in bonded hydrogen content. Hydrogen content is found reducing as oxygen content increases from zero to ~15 at.%. A systematic study is carried out to correlate the optoelectronic property with local atomic arrangement.
PB Begell House
LK https://www.dl.begellhouse.com/journals/57d172397126f956,73c968942ee14abd,48af5880204a0245.html