%0 Journal Article
%A Mazunov, D. O.
%D 2005
%I Begell House
%N 7-12
%P 891-901
%R 10.1615/TelecomRadEng.v63.i10.50
%T Field Emission Properties of Nonstoichiometric Silicon Oxides
%U https://www.dl.begellhouse.com/journals/0632a9d54950b268,09697d14040e5d41,6fe008bb33186b1c.html
%V 63
%X The emission characteristics of SiOx (x∼0.3) thin film flat cathodes, produced by thermal vacuum evaporation of silicon, have been investigated. It is shown that the high-temperature annealing (≥ 1000°C) of these films in the inert ambient gas with subsequent etching in the HF solution sufficiently improves emission properties: emission currents increase whereas the threshold voltage reduces. The explanation of the peculiarities of electron field emission from SiOx is proposed. It is demonstrated that the Fowler-Nordheim tunneling is a limitation process of the current flow under high-electric fields. Current peaks in the emission volt-ampere characteristics are revealed. Most likely, they are caused by the resonance tunneling mechanism.
%8 2006-07-14