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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Print: 0040-2508
ISSN Online: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v68.i5.20
pages 385-398

Resonant-Tunneling Cathode for a Gunn Diode

O. V. Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61022, Ukraine
E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine

ABSTRACT

A Gunn diode with a resonant-tunnelling cathode containing a quantum well with one energy level is considered. The use of such cathode leads to the fact that the current-voltage characteristics of the diode have two negative difference conductivity regions in either of which oscillations are possible. The oscillation efficiencies for both the regions are determined. The features of the operating diode is considered. The factors having an influence on the oscillation process have been analysed.


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