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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Print: 1093-3611
ISSN Online: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v4.i3.50
14 pages

HEAT TRANSFER FROM OXYGEN ATOMS RECOMBINATION ON SILICON CARBIDE: CHEMICAL EVOLUTION OF THE MATERIAL SURFASE

P. Cauquot
Laboratoire de Genie des Procedes Plasmas et Traitement de Surface - ENSCP -11, rue Pierre et Marie Curie - 75231 Paris Cedex 05
S. Cavadias
Laboratoire Genie Precedes Plasmas - ENSCP 11, rue Pierre et Marie Curie - 75005 Paris- France
Jacques Amouroux
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France

ABSTRACT

In order to quantify the energy transfer from the reactive flow to a surface, determination of recombination and accommodation coefficients (respectively γ and β coefficients) is required. The following work concerns atomic oxygen flow recombining on silicon carbide. The γ coefficient is measured in a pulsed oxygen plasma reactor in non equilibrium conditions, using an actinometiic method, whereas the β coefficient is determined in a micro-wave plasma reactor, using a calorimetric method. The βγ coefficient gives also the energetic transfer to the surface during the recombination reaction. The experimental study is undertaken on silicon carbide which presents interesting properties as refractory material. The measurements are performed on a large temperature range (300 - 1123 K) in order to point out a change in the recombination mechanism when the surface temperature rises. At the same time, the chemical structure of the material is followed by different analysis techniques (ESCA, SIMS and SEM) and shows a modification of the chemical composition of silicon carbide resulting from oxidation, ablation of the surface and diffusion of oxygen into the bulk material.


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