Publicado 12 números por año
ISSN Imprimir: 0040-2508
ISSN En Línea: 1943-6009
Indexed in
Electron Tunneling Through a Non-Stationary Potential Barrier
SINOPSIS
The electron tunneling through a non-stationary tunnel barrier is investigated within an approximation of low amplitude of a variable electric field. The usability conditions of applicability of a mode of the single-quantum transition through a non-stationary potential barrier are specified. The density dependence of a high-frequency electron current through a barrier on the frequency and the applied direct bias voltage is considered. It is shown that the active part of the high-frequency electron current density can be negative at the over-barrier electron passage through a barrier.
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Beletskii N.N., Borysenko S.A., Magnetoresistance of two-barrier magnetic tunnel junctions, 2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES, 2010. Crossref
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Abdulkadyrov D. V., Beletskii N. N., Theoretical study of a non-stationary magnetic tunnel junction magnetoimpedance, 2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES, 2010. Crossref
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Abdulkadyrov D. V., Beletskii N. N., Magnetorezistive effect of a non-stationary non-symmetric magnetic tunnel junction, 2013 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves, 2013. Crossref
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Abdulkadyrov D. V., Beletskii N. N., Giant change in the magnetoimpedance of the magnetic tunnel junction by an AC bias voltage, Physics of the Solid State, 53, 5, 2011. Crossref