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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimir: 0040-2508
ISSN En Línea: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v55.i2.100
9 pages

Modeling the Internal Amplification of Current Pulses in Reverse-Biased PNIPN Semiconducting Structures

P. P. Maksymov
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine
A. A. Colavita
International Center for Theoretical Physics Trieste, Italy
H. A. Cerdeira
Abdus Salam International Centre of Theoretical Physics, 34100 Trieste, Italy

SINOPSIS

The modified counter-sweep method has been used to solve the finite-difference equations of the drift-diffusion model of reverse-biased pnipn structures with abrupt p-n junctions. Calculated results are presented concerning the electric field in the pnipn structure and the currents through its i domain. As has been shown, with some values of the physical parameters the reverse-biased pnipn structure is characterized by a sufficient amount of positive feedback on the drift current to condition a nonlinear state of self-induced current oscillations. Owing to this effect, the reverse-biased pnipn structures seem to be prospective for the design of various semiconducting devices, like, e.g. avalanche photo-multipliers, high-frequency thyristors or chaotic oscillation generators.


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