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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimir: 0040-2508
ISSN En Línea: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v72.i5.50
pages 421-434

POWER CHARACTERISTICS OF MULTIFREQUENCY MILLIMETER AND SUBMILLIMETER WAVE SELF-OSCILLATORS BASED ON THE pn-i-pn STRUCTURES

K. A. Lukin
A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine
P. P. Maksymov
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine

SINOPSIS

Power characteristics are analyzed of mulifrequency millimeter and submillimeter wave self-oscillators on the basis of Si and GaAs dc reverse-biased pn−i−pn structures with abrupt p-n junctions. Mathematically, self-oscillators are described by drift-diffusion model equations for semiconductors. An algorithm is suggested for solving difference equations of the mathematical model. The volt-ampere characteristics of the pn−i−pn structures are analyzed. The dynamics in the distributions of the electric field, electric potential and total charge of mobile carriers and impurity atoms in the pn−i−pn structure is investigated. The Fourier spectrum of the useful power density and the electronic efficiency of the multifrequency self-oscillators are calculated.