Publicado 4 números por año
ISSN Imprimir: 2572-4258
ISSN En Línea: 2572-4266
Indexed in
GROWTH OF NANOCRYSTALLYTES IN A Ge-Se AMORPHOUS THIN FILM
SINOPSIS
The X-ray analysis was conducted for studying thin-film samples with a thickness from 10 nm to 200 nm, prepared from Ge10Se90 glass under nonequilibrium conditions on glass substrates. The films had an amorphous matrix containing Se, Ge, and GeSe2 nanocrystallites. With an increase in film thicknesses the average crystallite sizes increased from 20 nm to 40 nm and the crystallinity of films varied nonlinearly in the range of (0−100)%. The mechanism was offered for growth of nanocrystallites in the Ge-Se amorphous matrix. It was assumed that on the surface of all the condensed films depending on their thickness, a Ge amorphous thin film or a GeSe4 film was formed, which was crystallized in low-temperature annealing.
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Aleksandrovich E. V., Stepanova E. V., Vakhrouchev A. V., Aleksandrovich A. N., Bulatov D. L., Phase size effect in thin Ge-Se polycrystalline films, Technical Physics, 58, 9, 2013. Crossref