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Nanoscience and Technology: An International Journal

Publicado 4 números por año

ISSN Imprimir: 2572-4258

ISSN En Línea: 2572-4266

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 1.3 To calculate the five year Impact Factor, citations are counted in 2017 to the previous five years and divided by the source items published in the previous five years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) 5-Year IF: 1.7 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.7 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00023 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.11 SJR: 0.244 SNIP: 0.521 CiteScore™:: 3.6 H-Index: 14

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GROWTH OF NANOCRYSTALLYTES IN A Ge-Se AMORPHOUS THIN FILM

Volumen 2, Edición 1, 2011, pp. 61-69
DOI: 10.1615/NanomechanicsSciTechnolIntJ.v2.i1.50
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SINOPSIS

The X-ray analysis was conducted for studying thin-film samples with a thickness from 10 nm to 200 nm, prepared from Ge10Se90 glass under nonequilibrium conditions on glass substrates. The films had an amorphous matrix containing Se, Ge, and GeSe2 nanocrystallites. With an increase in film thicknesses the average crystallite sizes increased from 20 nm to 40 nm and the crystallinity of films varied nonlinearly in the range of (0−100)%. The mechanism was offered for growth of nanocrystallites in the Ge-Se amorphous matrix. It was assumed that on the surface of all the condensed films depending on their thickness, a Ge amorphous thin film or a GeSe4 film was formed, which was crystallized in low-temperature annealing.

CITADO POR
  1. Aleksandrovich E. V., Stepanova E. V., Vakhrouchev A. V., Aleksandrovich A. N., Bulatov D. L., Phase size effect in thin Ge-Se polycrystalline films, Technical Physics, 58, 9, 2013. Crossref

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