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Journal of Porous Media
Factor de Impacto: 1.752 Factor de Impacto de 5 años: 1.487 SJR: 0.43 SNIP: 0.762 CiteScore™: 2.3

ISSN Imprimir: 1091-028X
ISSN En Línea: 1934-0508

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Journal of Porous Media

DOI: 10.1615/JPorMedia.v13.i2.10
pages 97-102

DIFFUSION OF HYDROGEN IN POROUS SILICON-BASED SENSORS

Tayyar Dzhafarov
Yildiz Technical University
Sureyya Aydin Yuksel
Department of Physics, Yildiz Technical University, 34210 Esenler/Istanbul

SINOPSIS

Porous silicon (PS) layers of 65% porosity on n-type (111) Si substrates were prepared by anodic etching. Au/PS/Si structures have been fabricated by evaporation of thin Au film onto the PS surface. Current-voltage characteristics and the open-circuit voltage (Voc) generation in Au/PS/Si structures were examined at different ambient humidities (water vapor) in the temperature range 295-365 K. Generation of a voltage from 10 to 400 mV with the increase of the relative humidity from 50% relative humidity (RH) to 95% RH was observed in Au/PS/Si sensors. The response and recovery time of open-circuit voltage generated in Au/PS/Si Schottky-type sensors under humid atmosphere depends on ambient temperature. The effective diffusion coefficient of hydrogen estimated from response (or recovery) Voct curves on placing (or removal) of Au/PS/Si sensors in (or out) of humid ambient (90% RH) in the temperature range 313−363 K increases from 3.1 × 10−8 to 1.7 × 10−7 cm2/s and is described as D = 9.2 × 10−3 exp(−0.34 eV/kT). The possible mechanism of the hydrogen diffusion in porous silicon layers of Au/PS/Si sensors was considered.

REFERENCIAS

  1. Abdullaev, G. and Dzhafarov, T., Atomic Diffusion in Semiconductor Structures.

  2. Baratto, C., Sberveglieri, G., Comini, E., Faglia, G., Be-nussi, G., La Ferrara, V., Quercia, L., Di Francia, G., Guidi, V., Vincenzi, D., Boscarino, D., Rigato, V., Gold-catalysed porous silicon for NO<sub>x</sub> sensing.

  3. Basu, S., Fuel Science and Technology.

  4. Dzhafarov, T. and Can, B., Diffusion redistribution of hydrogen and oxygen in porous silicon films.

  5. Dzhafarov, T., Can Omur, B., and Allahverdiev, Z., Hydrogen-stimulated changes of properties of silver-porous silicon interfaces.

  6. Dzhafarov, T., Can Omur, B., Oruc, C., and Allahverdiev, Z., Hydrogen-sensing characteristics of Cu-PS-Si structures.

  7. Dzhafarov, T., Oruc, C., and Aydin, S., Humidity-voltaic characteristics of Au-porous silicon interfaces.

  8. Dzhafarov, T., Aydin, S., and Oren, D., Diffusion of 1 croup metals in porous silicon.

  9. Dzhafarov, T., Aydin, S., and Oren, D., Effect of diffusion of 1 group metal (Ag) on characteristics of metal/porous silicon sensors.

  10. Goryachev, D., Belyakov, L., Sreseli, O., and Polisski, G., Mechanism of anodic electroluminescence of porous silicon in electrolytes.

  11. Rettig, F., Moos, R., and Plog, C., Sulfer adsorber for thick-film exhaust gas sensors.


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