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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Imprimir: 1093-3611
ISSN En Línea: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v1.i2.120
pages 287-293

SYNTHESIS AND CHARACTERIZATION OF NEW GALLIUM PHOSPHORUS OXYNITRIDES "GAPON".

Valerie Peltier
Laboratoire des Verres et Ceramiques, URA 1496 CNRS Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex
Roland Conanec
Laboratoire des Verres et Ceramiques, URA 1496 CNRS Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex
Roger Marchand
Laboratoire des Verres et Ceramiques, URA 1496 CNRS Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex

SINOPSIS

New nitride-type phosphates have been characterized in the Ga-P-O-N system. These "GaPON" oxynitrides have been prepared by nitridation under ammonia flow in the 500-1000°C temperature range of gallophosphates as reactive powders obtained by sol-gel route. The GaPON oxynitrides, in which the variation of both phosphorus/gallium ratio and nitrogen content define a composition domain, are X-ray amorphous powders characterized by high specific surface areas.


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