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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Imprimir: 1093-3611
ISSN En Línea: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v14.i1-2.170
pages 193-203

AN INFLUENCE OF PLASMA TREATMENT ON STRUCTURE PROPERTIES OF THIN SiC FILMS ON Si

K. Kh. Nussupov
Institute of Physics and Technology, 050032 Ibragimov str, 11, Almaty, Kazakhstan
N. B. Beisenkhanov
Institute of Physics and Technology of the MES RK, Ibragimova street 11, Almaty 050032, Kazakhstan
K. A. Mit'
Institute of Physics and Technology of the MES RK, Ibragimova street 11, Almaty 050032, Kazakhstan
Daniya M. Mukhamedshina
Institute of Physics and Technology of the MES RK, Ibragimova street 11, Almaty 050032, Kazakhstan
Z. M. Amreyeva
Institute of Physics and Technology, 050032 Ibragimov str, 11, Almaty, Kazakhstan
Z. B. Omarova
Institute of Physics and Technology, 050032 Ibragimov str, 11, Almaty, Kazakhstan

SINOPSIS

In this paper, an influence of processing in hydrogen plasma on a structure of SiC0.7, SiC0.95 and SiC 1.4 layers formed by implantation of carbon ions (40, 20, 10, 5 and 3 keV) into silicon substrate is investigated. The glow discharge hydrogen plasma was generated at a pressure of 6.5 Pa with a capacitive coupled r.f. power (27.12 MHz) of about 20 W. Temperature of processing did not exceed 100°C. It is found that after plasma treatment the surface of SiC0.95 film becomes friable and porous. Annealing at temperature 800°C has led to the formation of granular structure of the surface while the untreated by plasma film at the same temperature shows the surface deformation only. The half-width of Si−C peak of IR transmission spectrum of SiC0.95 layer after processing in hydrogen plasma and annealing at 900°C for 30 min is equal to 78 cm−1 and indicates on the formation of highly qualitative crystalline β−SiC layer, surpassing on quality of structure perfection of an untreated in plasma SiC0.95 layer isochronously annealed at temperatures in an interval 200−1400°C. This effect of low temperature crystallization stimulated in plasma is explained by disintegration of stable carbon- and carbon-silicon clusters under influence of hydrogen plasma.


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